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| Data Sheet No.PD 60153-J IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500m (max) 50V 2A 1.5s Description The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.This device combines a HEXFET(R) POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Package 8-Lead SOIC Typical Connection Load R in series (if needed) Q D IN control S S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS042G 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max. continuous current (1) (for all Isd mosfets, rth=125oC/W) Isd pulsed Diode max. pulsed current (1) (1) P d ESD1 ESD2 T stor. Tj max. Min. -- -0.3 -10 -- -- -- -- -- -55 -40 Max. 47 7 +10 1.2 3 1 4 0.5 150 +150 Units V mA Test Conditions A Maximum power dissipation (for all Pd mosfets, rth=125oC/W) Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature W C=100pF, R=1500, kV o C=200pF, R=0, L=10H C Thermal Characteristics Symbol Parameter Rth1 Rth2 Rth3 Thermal resistance with standard footprint (2 mosfets on) Thermal resistance with standard footprint (1 mosfet on) Thermal resistance with 1" square footprint (2 mosfets on) Min. -- -- -- Typ. 100 125 65 Max. Units Test Conditions -- -- -- o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous Drain to Source voltage High level input voltage Low level input voltage Continuous drain current (both mosfets at this current) o Tamb=85 C TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Vds (max) VIH VIL I ds Min. -- 4 0 -- 1 -- 0 Max. 35 6 0.5 0.53 5 1 1 Units V A k S kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. 2 www.irf.com IPS042G Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Idss1 @Tj=25oC Min. -- -- 0 0 47 50 7 1 25 50 Typ. 370 590 0.5 5 52 53 8.1 1.6 90 130 Max. Units Test Conditions 500 900 25 50 56 60 9.5 2 200 250 m Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC A Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered ON state resistance Tj = 25oC Tj = 150oC Drain to source leakage current Drain to source leakage current Drain to Source clamp voltage 1 Drain to Source clamp voltage 2 IN to Source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current Idss2 @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vin th Iin, -on Iin, -off V A Switching Electrical Characteristics Vcc = 14V, Resistive Load = 20, Rinput = 1k, 100s pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Ton Tr Trf Toff Tf Qin Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Min. 0.05 0.5 -- 0.5 0.5 -- Typ. Max. Units Test Conditions 0.2 1.3 5 1.6 1.5 1 0.5 2.5 -- 2.5 2.5 -- See figure 2 s See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. -- 1.1 1.5 2 -- Typ. 165 1.7 2.3 10 400 Max. Units Test Conditions -- 2.2 3 40 -- C A V s J o See fig. 1 See fig. 1 V in = 0V, Tj = 25oC Vcc = 14V www.irf.com 3 IPS042G Functional Block Diagram All values are typical DRAIN 47 V 4000 200 k IN 8.1 V 80 A S R Q Q I sense T > 165c I > 1sd SOURCE Lead Assignments D1 D1 D2 D2 1 S1 In1 S2 In2 8 Lead SOIC 4 www.irf.com IPS042G Vin 5V 0V 90 % Vin 10 % Ids I shutdown Isd t < T reset t > T reset Tr-in 90 % Ids T Tsd (165 c) 10 % Td on tr T shutdown Td off tf Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + R D 14 V - Ids Vds clamp Vin Vds ( Vcc ) 5v 0v IN S Vds Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS042G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 200% 180% 160% Tj = 150oC 140% 120% 100% 80% Tj = 25o C 60% 40% 20% 0% -50 -25 7 8 0 25 50 75 100 125 150 175 Figure 5 - Rds ON (m) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 ton delay rise tim e 130% rdson 4 toff delay fall tim e 3 2 1 0 6 7 8 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com IPS042G 100 100 delay on rise tim e 130% rdson 10 10 delay off fall tim e 1 1 0 .1 10 100 1000 10000 0 .1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor () Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor () 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 Isd 25C Ilim 25C 6 7 8 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) Figure 12 - I shutdown (A) Vs Temperature (oC) www.irf.com 7 IPS042G 3 Std. footprint 127C/W m osfet on Std. footprint 100C/W m osfet on 1 2 10 T=25C Std. footprint T=100C Std footprint Current path capability should be above this curve 2 1 1 1 mosfet is on Load characteristicshould characteristic should be below this curve underneath this curve 0 -50 0 50 100 150 200 0.1 Figure 14 - Ids (A) Vs Protection Resp. Time (s) Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) 10 100 single pulse 1000 Hz rth=100C/W dT=25C 10kHz rth=100C/W dT=25C 10 1 1 Single pulse rth 1 mosfet active Vbat = 14 V Tjini = T sd all curves for 1 mosfet active rth 2 mosfets active 0 .1 1 10 100 0.1 0 .0 1 0 .1 Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s) 8 www.irf.com IPS042G 200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 Vds clam p @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 17 - Input current (A) Vs Tj (oC) Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 16 14 12 10 8 6 4 2 0 -50 Treset rise tim e fall tim e -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset (s) Vs Tj (oC) www.irf.com 9 IPS042G D A 5 B F OOT PRINT 8X 0.72 [.028] DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 c 6 E 8 7 6 5 H 0.25 [.010] A 6.46 [.255] D E e e1 H K L 8X 1.78 [.070] 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 3X 1.27 [.050] y K x 45 y 0.10 [.004] 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES: 1. DIMENSIONING & TOLE RANCING PE R ASME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE S HOWN IN MILLIME TE RS [INCHE S]. 4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A SUBST RATE. 8-Lead SOIC 01-6027 01-0021 11 (MS-012AA) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 10 www.irf.com |
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